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詳細(xì)摘要：This product contains WSe2 flakes solution in ethanol.

詳細(xì)摘要：The only commercially available PTAS organic salt.

詳細(xì)摘要：This product contains GeS mono-, few-layer, and thick flakes in isopropanol solution.

詳細(xì)摘要：This product contains GeSe mono- and few-layer thick flakes in isopropanol solution.

詳細(xì)摘要：兩種不同的半導(dǎo)體相接觸所形成的界面區(qū)域稱為異質(zhì)結(jié)，低維材料在線可以定制不同層數(shù)和結(jié)構(gòu)的異質(zhì)結(jié)材料

詳細(xì)摘要：The only commercially available PTAS organics.

詳細(xì)摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.

詳細(xì)摘要：【巨納】基于石英基底的單層連續(xù)二硫化鉬薄膜（10*10mm）

詳細(xì)摘要：MnO2 is 2D catalytic and electronic grade semiconducting 2D material. In the bulk form, MnO2 has 1.5 eV predicted band gap while it has been anticipated to increase to 2.0 eV in the monolayer form .

詳細(xì)摘要：Graphitic carbon nitride （g-C3N4） has been one of the most attractive materials in the field owing to its unique electronic structure.

詳細(xì)摘要：【巨納】基于藍(lán)寶石基底的單層連續(xù)二硫化鉬薄膜（10*10mm）

詳細(xì)摘要：The only commercially available lead iodide （PbI2） by 2Dsemiconductors USA. PbI2 crystallizes in a CdI2 structure, in which I- anions are packed hexagonally

詳細(xì)摘要：【巨納】基于二氧化硅基底的單層連續(xù)二硫化鉬薄膜（10*10mm）

詳細(xì)摘要：【巨納】基于柔性PET基底的三角形單層二硫化鉬（10*10mm）

詳細(xì)摘要：CrI3 （chromium triiodide） is a ferromagnetic semiconductor with Curie temperature （Tc） 61 K with significant magnetic anisotropy.

詳細(xì)摘要：The first and only commercially available Ca（OH）? crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals.

詳細(xì)摘要：【巨納】基于藍(lán)寶石基底的三角形單層二硫化鉬（1010mm）

詳細(xì)摘要：Chromium bromide （CrBr3） is a 2D ferromagnetic semiconductor with a Curie temperature of ~40K.

詳細(xì)摘要：CdI? is a layered semiconductor with indirect gap at 3.0 eV for bulk and its properties in the monolayer form is currently unknown.

詳細(xì)摘要：GeP has highly anisotropic dispersions of band structures, with a layer-dependent indirect band gap from （theoretically predicted） 1.68 eV of monolayer to 0.51 eV of bulk.