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詳細摘要：Isolated monolayer thickness WS2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：Isolated monolayer thickness WSe2 are grown onto c-cut （0001） sapphire substrates.

詳細摘要：This product contains full area coverage PtSe2 layers （single/multi） on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage WS2 monolayers on c-cut sapphire substrates.

詳細摘要：The first and only commercially available Mg（OH）? crystals were grown using float zone synthesis technique to yield perfectly layered, large size, highly crystalline vdW layered crystals.

詳細摘要：This product contains full area coverage ReSe2 monolayers on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage ReS2 monolayers on c-cut sapphire substrates.

詳細摘要：This product contains full area coverage MoS2 monolayers on SiO2/Si substrates.

詳細摘要：Full Area Coverage Monolayer MoS2 on c-cut Sapphire

詳細摘要：尺寸：1*1cm/5*5cm/10*10cm
層數(shù)：單層
晶粒：單晶/多晶，50~300um

詳細摘要：This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates.

詳細摘要：形狀：可任意裁剪
尺寸：1*1cm/5*5cm/10*10cm
層數(shù)：單層
晶粒：單晶/多晶，50~300um

詳細摘要：形狀：可任意裁剪
尺寸：1*1cm/2*2cm/5*5cm/10*10cm
層數(shù)：單層
晶粒：單晶/多晶，50~300um

詳細摘要：1．將單層硫化鉬轉(zhuǎn)移至襯底（襯底可根據(jù)客戶需求選定）
2．邊長>15um （三角形）片內(nèi)層數(shù)均勻
3．襯底上轉(zhuǎn)移3個（數(shù)量可定制）帶電極的單層硫化鉬樣品
4．電極間距：~5um

詳細摘要：超高純MoS2粉末 超高純二硫化鉬粉末 （1g）
純度：99.99995%
重量：1g
制備方法：使用再提純后的超高純單質(zhì)高真空密封燒結(jié)
用途：用于生長制備二維晶體材料

詳細摘要：形狀：可任意裁剪
尺寸：1*1cm
襯底：紫銅
層數(shù)：單層
晶粒：單晶/多晶，50~300um
量大價格面議

詳細摘要：高純MoS2粉末 高純二硫化鉬粉末 （1g）
純度：99.9995%
重量：1g
制備方法：使用再提純后的超高純單質(zhì)高真空密封燒結(jié)
用途：用于生長制備二維晶體材料

詳細摘要：形狀：可任意裁剪
尺寸：1*1cm/2*2cm/5*5cm/10*10cm
層數(shù)：單層
晶粒：單晶/多晶，50~300um