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詳細摘要：三維石墨烯泡沫（1*1英寸）三維獨立石墨烯泡沫 3D Graphene Foam-3D Freestanding Graphene Foam
尺寸：11*1英寸
熱釋放帶溫度：120 °C

詳細摘要：ITIC represents the start of a new generation of electron-accepting small molecules for organic photovoltaic （OPV） applications.

詳細摘要：三維石墨烯泡沫（1*1厘米）-三維獨立石墨烯泡沫 3D Graphene Foam-3D Freestanding Graphene Foam
尺寸：1*1厘米
熱釋放帶溫度：120 °C

詳細摘要：High purity - PBDB-T is purified by Soxhlet extraction with methanol, hexane and chlorobenzene under an argon atmosphere.

詳細摘要：High molecular weight with high solubility and high purity - TQ1 polymer is purified by soxhlet extraction with methanol, hexane and chloroform under an argon atmosphere - polymer at its pure best

詳細摘要：Our single crystal SnS2 （Tin disulfide） crystals come with guaranteed electronic and optical grade crystal quality and purity.

詳細摘要：Single crystal highly oriented synthetic 2H-phase MoS2 crystals have been developed at our facilities in the USA starting from the powder making to crystallization.

詳細摘要：Environmentally stable 2H-TaS2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport （CVT） technique.

詳細摘要：形狀：可任意裁剪
尺寸：1*1cm/2*2cm/5*5cm/10*10cm
層數(shù)：單層
晶粒：單晶/多晶，50~300um

詳細摘要：Environmentally stable anisotropic transition metal trichalcogenide material ZrS3 is available at 2Dsemiconductors USA.

詳細摘要：Antimony sulfide is the chemical compound with the formula Sb2S3 which crystallizes in an orthorhombic space group.

詳細摘要：Magnetic semiconductor FePS3 has a monoclinic structure with the factor group C2h.

詳細摘要：Our single crystal SnS （Tin sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細摘要：Single crystal 1Tphase TaS? （Tantalum disulfide） crystals come with guaranteed charge density wave （CDW） behavior.

詳細摘要：Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

詳細摘要：Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2h.

詳細摘要：The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細摘要：Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals: Our large size （~1cm in size） vdW WS2 crystals are treated as gold standards

詳細摘要：Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.