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詳細(xì)摘要：三硫化鐵（磷摻雜）晶體（99.995%） FePS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：
FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細(xì)摘要：Single crystal highly oriented -synthetic- molybdenum disulfide （2H-MoS?） comes in bulk.

詳細(xì)摘要：三硫化鈮晶體（99.995%） NbS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細(xì)摘要：硫鹽礦物晶體 Pb3Sn4FeSb2S14（Lead Tin Ferrum Antimony Sulfide）
晶體結(jié)構(gòu)：六邊形
類型：合成
尺寸：~8mm
純度：>99.995%
屬性：超導(dǎo)體

詳細(xì)摘要：Rhenium atoms perfectly incorporated into MoS? matrix.

詳細(xì)摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in th

詳細(xì)摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns.

詳細(xì)摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yi

詳細(xì)摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

詳細(xì)摘要：二硫化鉛錫晶體 PbSnS2（Lead Tin Disulfide）
晶體結(jié)構(gòu)：六邊形
類型：天然晶體
尺寸：~8mm
純度：>99.995%
屬性：半導(dǎo)體

詳細(xì)摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.

詳細(xì)摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.

詳細(xì)摘要：二硫化鉬晶體（天然） MoS2（Molybdenum Disulfide）
晶體結(jié)構(gòu)：六邊形
類型：天然晶體
尺寸：~10mm-20mm
純度：>99%
屬性：半導(dǎo)體

詳細(xì)摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.

詳細(xì)摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

詳細(xì)摘要：羧基化石墨烯 Carboxyl Graphene
直徑：1~5um
厚度：0.8~1.2nm
羧基比例：5%
純度：99%

詳細(xì)摘要：工業(yè)級(jí)石墨烯 Industrial-Quality Graphene
制備方法：熱剝離還原
厚度（nm）：≤3
BET比表面積（平方米/克）：~ 600
電阻率（Ω?cm）：0.30

詳細(xì)摘要：Our TiSe2 crystals are stabilized in 2H-phase （CDW metallic phase）.

詳細(xì)摘要：Environmentally stable 2H-TaSe2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport （CVT） technique.

詳細(xì)摘要：Zirconium triselenide belongs to the group-IV transition metal trichalcogenides.