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詳細摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals.

詳細摘要：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

詳細摘要：The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細摘要：Synthetic single crystal Tin lead disulfide （PbSnS?） is a special member of layered transitional metal dichalcogenides.

詳細摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

詳細摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals

詳細摘要：NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's magnetic response in the monolayer limit remain largely unknown.

詳細摘要：ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, exhibiting Fermi liquid behavior with two Fermi pockets at low temperatures.

詳細摘要：Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV.

詳細摘要：Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA.

詳細摘要：* environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 displays metallic and superconducting behavior.

詳細摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoS2 crystals.

詳細摘要：Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細摘要：一步轉(zhuǎn)移石墨烯（進口/1*1cm單層） Trivial Transfer Graphene

詳細摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細摘要：Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

詳細摘要：一步轉(zhuǎn)移石墨烯（5*5cm單層） Trivial Transfer Graphene

詳細摘要：Single crystal ReS? （Rhenium disulfide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

詳細摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.